All MOSFET. FDS9958F085 Datasheet

 

FDS9958F085 Datasheet and Replacement


   Type Designator: FDS9958F085
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SO-8
 

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FDS9958F085 Datasheet (PDF)

 7.1. Size:339K  fairchild semi
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FDS9958F085

July 2007FDS9958tmDual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the RoHS

 7.2. Size:549K  fairchild semi
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FDS9958F085

November 2008FDS9958_F085Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the o

 7.3. Size:334K  onsemi
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FDS9958F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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History: JANSR2N7292

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