SFP080N100AC2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP080N100AC2
Marking Code: 080N100AC2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 205 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
SFP080N100AC2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP080N100AC2 Datasheet (PDF)
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SFP080N100AC2,SFB077N100AC2 N-MOSFET 100V, 6.5m, 110AFeatures Product SummaryLow On-ResistanceVDS100VFast SwitchingRDS(on) typ. 6.5m100% Avalanche TestedRepetitive Avalanche Allowed up to Tjmax ID110ALead-Free, RoHS Compliant100% DVDS TestedApplications Power management for inverter systems100% Avalanche TestedSynchronous rectificationSFP08
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SFP080N150C2, SFB077N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product SummaryVDS150V High Speed Power Switching Enhanced Body diode dv/dt capabilityRDS(on)6.0m Enhanced Avalanche RuggednessID 140AApplications100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100
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SFP085N75C2, SFB082N75C2 N-MOSFET 75V, 6.5m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS75V Excellent QgxRDS(on) product(FOM)RDS(on)6.5m Qualified according to JEDEC criteria ID 100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested1
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sfp085n80dc2 sfb082n80dc2.pdf
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