SFP098N200C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP098N200C3
Marking Code: 098N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 135 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 195 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 425 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: TO-220
SFP098N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP098N200C3 Datasheet (PDF)
sfp098n200c3 sfb096n200c3 sfw097n200c3.pdf
SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
sfp090n120c2 sfb087n120c2.pdf
SFP090N120C2,SFB087N120C2 N-MOSFET 120V, 7.5m, 120AProduct SummaryFeaturesVDS120V Reliable and RuggedRDS(on) typ. 7.5m Lead Free and Green Devices AvailableID120A(RoHS Compliant)100% DVDS TestedpplicationsA100% Avalanche TestedSwitching application Power Management for Inverter Systems.SFP090N120C2 SFB087N120C2N-Channel MOSFETPackage
sfp090n80c2 sfb087n80c2.pdf
SFP090N80C2,SFB087N80C2 N-MOSFET 80V, 7.4m, 80AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.4m Qualified according to JEDEC criteria ID80A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP09
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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