SFP133N150AC2
MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP133N150AC2
Marking Code: 133N150C2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 137
nC
trⓘ - Rise Time: 39
nS
Cossⓘ -
Output Capacitance: 553
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0133
Ohm
Package:
TO-220
SFP133N150AC2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP133N150AC2
Datasheet (PDF)
..1. Size:3129K cn scilicon
sfp133n150ac2 sfb130n150ac2.pdf
SFP133N150AC2, SFB130N150AC2 N-MOSFET 150V, 12.5m, 120AFeatures Product Summary Enhancement Mode VDS150V Very Low On-Resistance RDS(on)12.5m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Test
9.1. Size:539K winsemi
sfp13n50.pdf
SFP13N50SFP13N50SFP13N50SFP13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce
9.2. Size:732K cn scilicon
sfp135n200c3 sfb132n200c3.pdf
SFP135N200C3,SFB132N200C3ENGN-MOSFET 200V, 11.3m, 95AFeatures Product Summary N-channel, normal levelVDS 200V Enhanced avalanche ruggednessRDS(on) 11.3m Maximum 175C junction temperatureID 95A100% DVDS TestedApplications100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systemsSFP135N2
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