All MOSFET. SFW024N100C3 Datasheet

 

SFW024N100C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFW024N100C3
   Marking Code: 024N100C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 166 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-247

 SFW024N100C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFW024N100C3 Datasheet (PDF)

 ..1. Size:2812K  cn scilicon
 sfw024n100c3.pdf

SFW024N100C3 SFW024N100C3

SFW024N100C3 N-MOSFET 100V, 2.0m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.0m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC

 9.1. Size:1437K  cn scilicon
 sfw025n100c3.pdf

SFW024N100C3 SFW024N100C3

SFW025N100C3N-MOSFET 100V, 2.3m, 190AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.3m Fast SwitchingID190A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFW025N100C3Package Marking and Ordering InformationPart # M

 9.2. Size:1427K  cn scilicon
 sfw025n100i3.pdf

SFW024N100C3 SFW024N100C3

SFW025N100I3N-MOSFET 100V, 2.3m, 190AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.3m Fast SwitchingID190A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFW025N100I3Package Marking and Ordering InformationPart # M

 9.3. Size:13679K  cn scilicon
 sfw027n100c3.pdf

SFW024N100C3 SFW024N100C3

SFW027N100C3 N-MOSFET 100V, 2.2m, 190AFeature Product Summary High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on) typ. 2.2m Enhanced Avalanche RuggednessID190A100% DVDS TestedApplication100% Avalanche Tested Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and InductrialD

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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