SFW1800N650C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFW1800N650C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23.3 nC
trⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-247
SFW1800N650C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFW1800N650C2 Datasheet (PDF)
..1. Size:10381K cn scilicon
sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf
sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf
SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m, 60AFeatures Product Summary Low R & FOMDS(on) VDS650VExtremely low switching lossRDS(on) typ. 180mExcellent stability and uniformityID60AEasy to drive100% DVDS TestedApplications100% Avalanche Tested Lighting Hard switching PWM Server power supply ChargerSFW
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