SFW280N600C4 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFW280N600C4
Marking Code: 280N600C4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 178.7 nC
trⓘ - Rise Time: 87.3 nS
Cossⓘ - Output Capacitance: 756.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TO-247
SFW280N600C4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFW280N600C4 Datasheet (PDF)
sfw280n600c4.pdf
SFW280N600C4 N-MOSFET 600V, 28m, 240AFeaturesProduct Summary Low R & FOMDS(on) VDS600V Excellent low switching lossRDS(on) typ. 28m Excellent stability and uniformityID240A Easy to driveApplications100% DVDS Tested PC power100% Avalanche Tested Server power supply Telecom Solar invertor Super charger for automobilesSFW
sfw280n600bc4.pdf
SFW280N600BC4 N-MOSFET 600V, 25.4m, 80AFeaturesProduct Summary Ultra-fast body diode VDS600V Very low FOM RDS(on)QgRDS(on)25.4m Easy to use/driveID 80A 100% avalanche tested RoHS100% DVDS TestedApplications Switch Mode Power Supply (SMPS)100% Avalanche Tested Uninterruptible Power Supply (UPS)100% Avalanche Tested100% Avalan
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