JCS10N80FC Specs and Replacement
Type Designator: JCS10N80FC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34.8 nS
Cossⓘ - Output Capacitance: 235.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
JCS10N80FC substitution
- MOSFET ⓘ Cross-Reference Search
JCS10N80FC datasheet
jcs10n80fc jcs10n80gdc.pdf
N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch... See More ⇒
jcs10n80f.pdf
N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch... See More ⇒
jcs10n60f jcs10n60c.pdf
R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES ... See More ⇒
Detailed specifications: JCS10N65B, JCS10N65C, JCS10N65F, JCS10N65S, JCS10N70B, JCS10N70C, JCS10N70F, JCS10N70S, IRF740, JCS10N80GDC, JCS110N07I, JCS11N90ABT, JCS11N90WT, JCS12N65BEI, JCS12N65CEI, JCS12N65FEI, JCS12N65SEI
Keywords - JCS10N80FC MOSFET specs
JCS10N80FC cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK2598 | JCS10N70B | SLC500MM15SHN2
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