All MOSFET. JCS13AN50CC Datasheet

 

JCS13AN50CC Datasheet and Replacement


   Type Designator: JCS13AN50CC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32.1 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220
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JCS13AN50CC Datasheet (PDF)

 ..1. Size:1649K  jilin sino
 jcs13an50bc jcs13an50sc jcs13an50cc jcs13an50fc.pdf pdf_icon

JCS13AN50CC

N N- CHANNEL MOSFET RJCS13AN50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max(@Vgs=10V) 0.45 Qg 32.1 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

 9.1. Size:1016K  1
 jcs13n50ft.pdf pdf_icon

JCS13AN50CC

N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

 9.2. Size:1655K  jilin sino
 jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf pdf_icon

JCS13AN50CC

N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

 9.3. Size:1016K  jilin sino
 jcs13n50ft.pdf pdf_icon

JCS13AN50CC

N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

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Keywords - JCS13AN50CC MOSFET datasheet

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