JCS15N70FC
MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS15N70FC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 710
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44.6
nC
trⓘ - Rise Time: 112
nS
Cossⓘ -
Output Capacitance: 235
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55
Ohm
Package:
TO220F
JCS15N70FC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS15N70FC
Datasheet (PDF)
..1. Size:1150K jilin sino
jcs15n70fc.pdf
N RN-CHANNEL MOSFET JCS15N70FC_K103 Package MAIN CHARACTERISTICS ID 15.0 A VDSS 710 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS
5.1. Size:811K jilin sino
jcs15n70c jcs15n70f.pdf
N RN-CHANNEL MOSFET JCS15N70C Package MAIN CHARACTERISTICS ID 15.0 A VDSS 700 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS F
8.1. Size:2166K jilin sino
jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf
N RN-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-maxVgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o
8.2. Size:1723K jilin sino
jcs15n65fei jcs15n65bei jcs15n65sei jcs15n65cei.pdf
N RN-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
8.3. Size:1109K jilin sino
jcs15n65fh.pdf
N RN-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
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