JCS18N25FC
MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS18N25FC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32.13
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.48
nC
trⓘ - Rise Time: 46
nS
Cossⓘ -
Output Capacitance: 178.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23
Ohm
Package:
TO220F
JCS18N25FC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS18N25FC
Datasheet (PDF)
..1. Size:721K jilin sino
jcs18n25vc jcs18n25rc jcs18n25cc jcs18n25fc.pdf
N-CHANNEL MOSFET JCS18N25C Package MAIN CHARACTERISTICS ID 18A VDSS 250V Rdson-max@Vgs=10V 230m Qg-typ 17.48nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS
8.1. Size:948K jilin sino
jcs18n50wh.pdf
N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS18N50WH ;NSpe MAIN CHARACTERISTICS \ Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 50nC APPLICATIONS (u l High efficiency swi
8.2. Size:1873K jilin sino
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf
N N- CHANNEL MOSFET RJCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC Eoss@Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS
8.3. Size:1269K jilin sino
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
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