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FDY101PZ Specs and Replacement

Type Designator: FDY101PZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT523F

FDY101PZ substitution

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FDY101PZ datasheet

 ..1. Size:127K  fairchild semi
 fdy101pz.pdf pdf_icon

FDY101PZ

January 2006 FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro... See More ⇒

 9.1. Size:177K  fairchild semi
 fdy100pz.pdf pdf_icon

FDY101PZ

January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A... See More ⇒

 9.2. Size:267K  fairchild semi
 fdy1002pz.pdf pdf_icon

FDY101PZ

October 2008 FDY1002PZ Dual P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@VG... See More ⇒

 9.3. Size:203K  fairchild semi
 fdy102pz.pdf pdf_icon

FDY101PZ

February 2010 FDY102PZ tm Single P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@... See More ⇒

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Detailed specifications: SDU02N25, FDT86244, FDT86246, FDU3N40, SDT03N04, FDV305N, FDY1002PZ, FDY100PZ, 8205A, FDY102PZ, FDY2000PZ, FDY3000NZ, FDY300NZ, FDY301NZ, FDY302NZ, FDY4000CZ, SDT02N02

Keywords - FDY101PZ MOSFET specs

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