JCS40N25WT MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS40N25WT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 87 nC
trⓘ - Rise Time: 620 nS
Cossⓘ - Output Capacitance: 685 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: TO247
JCS40N25WT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS40N25WT Datasheet (PDF)
jcs40n25wt jcs40n25ant.pdf
N RN-CHANNEL MOSFET JCS40N25T Package MAIN CHARACTERISTICS ID 40 A VDSS 250 V Rdson-max 68m @Vgs=10V Qg-typ 87 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs40n25fc jcs40n25sc jcs40n25wc.pdf
N RN-CHANNEL MOSFET JCS40N25C Package MAIN CHARACTERISTICS ID 40A VDSS 250V Rdson-max@Vgs=10V 69m Qg-typ 50.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
