JCS4AN120CA Datasheet and Replacement
Type Designator: JCS4AN120CA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 286 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220
JCS4AN120CA substitution
JCS4AN120CA Datasheet (PDF)
jcs4an120fa jcs4an120ca jcs4an120sa.pdf

N N- CHANNEL MOSFET RJCS4AN120A MAIN CHARACTERISTICS Package ID 4A VDSS 1200 V Rdson-max 4.0 @Vgs=10V Qg-typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
Datasheet: JCS3N80R , JCS3N80S , JCS3N80V , JCS40N25ANT , JCS40N25FC , JCS40N25SC , JCS40N25WC , JCS40N25WT , 2SK3568 , JCS4AN120FA , JCS4AN120SA , JCS4N90CA , JCS4N90FA , JCS4N90RA , JCS4N90SA , JCS4N90VA , JCS5AN50C .
History: NCEP6020AS | 2SK2985 | RU30230R | 2SK1959 | JCS40N25SC | STP62NS04Z | IRF5851TR
Keywords - JCS4AN120CA MOSFET datasheet
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History: NCEP6020AS | 2SK2985 | RU30230R | 2SK1959 | JCS40N25SC | STP62NS04Z | IRF5851TR



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