JCS7N70S MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS7N70S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 125 pF
Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm
Package: TO263
JCS7N70S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS7N70S Datasheet (PDF)
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf
N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
jcs7n70fe.pdf
N RN-CHANNEL MOSFET JCS7N70FE Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max(@Vgs=10V) 1.35 Qg-typ 25.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch
jcs7n120aba jcs7n120wa.pdf
N RN-CHANNEL MOSFET JCS7N120A MAIN CHARACTERISTICS Package ID 7 A VDSS 1200 V RdsonVgs=10V 1.5 -MAX Qg-Typ 61.13 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supp
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf
N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po
jcs7n65.pdf
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf
N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
jcs7n95fa jcs7n95ca jcs7n95sa jcs7n95aba.pdf
N RN-CHANNEL MOSFET JCS7N95A Package MAIN CHARACTERISTICS 7A ID 950 V VDSS Rdson-Max 1.5 @Vgs=10VQg-typ 42.48nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge
jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf
N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf
N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf
N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs7n80fc.pdf
N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSB90R420S2 | ISCNH372B
