All MOSFET. MC10N006 Datasheet

 

MC10N006 Datasheet and Replacement


   Type Designator: MC10N006
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 229 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 718 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

MC10N006 Datasheet (PDF)

 ..1. Size:1442K  jilin sino
 mc10n006.pdf pdf_icon

MC10N006

N N-CHANNEL MOSFET MC10N006 MAIN CHARACTERISTICS Package ID 130A VDSS 100V Rdson-typ - 5.0m (@Vgs=10V Qg-typ 81nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC

 7.1. Size:1694K  jilin sino
 mc10n007l.pdf pdf_icon

MC10N006

N N-CHANNEL MOSFET MC10N007L MAIN CHARACTERISTICS Package ID 110A VDSS 100V Rdson-max - 9m (@Vgs=10V Qg-typ 86nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC

 7.2. Size:1927K  jilin sino
 mc10n005.pdf pdf_icon

MC10N006

N N-CHANNEL MOSFET MC10N005 MAIN CHARACTERISTICS Package ID 171A VDSS 100V Rdson max - 4.5m (@Vgs=10V Qg-typ 105nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC

 8.1. Size:1268K  jilin sino
 mc10n020al.pdf pdf_icon

MC10N006

N N-CHANNEL MOSFET MC10N020AL MAIN CHARACTERISTICS Package ID 45A VDSS 100V Rdson-max - 20m (@Vgs=10V Qg-typ 30.5nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC

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Keywords - MC10N006 MOSFET datasheet

 MC10N006 cross reference
 MC10N006 equivalent finder
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