MC10N007L MOSFET. Datasheet pdf. Equivalent
Type Designator: MC10N007L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 471 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: IPAK
MC10N007L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MC10N007L Datasheet (PDF)
mc10n007l.pdf
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N N-CHANNEL MOSFET MC10N007L MAIN CHARACTERISTICS Package ID 110A VDSS 100V Rdson-max - 9m (@Vgs=10V Qg-typ 86nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC
mc10n006.pdf
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N N-CHANNEL MOSFET MC10N006 MAIN CHARACTERISTICS Package ID 130A VDSS 100V Rdson-typ - 5.0m (@Vgs=10V Qg-typ 81nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC
mc10n005.pdf
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N N-CHANNEL MOSFET MC10N005 MAIN CHARACTERISTICS Package ID 171A VDSS 100V Rdson max - 4.5m (@Vgs=10V Qg-typ 105nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC
mc10n020al.pdf
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N N-CHANNEL MOSFET MC10N020AL MAIN CHARACTERISTICS Package ID 45A VDSS 100V Rdson-max - 20m (@Vgs=10V Qg-typ 30.5nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification DC/DC
mc10n020.pdf
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N N-CHANNEL MOSFET MC10N020 MAIN CHARACTERISTICS Package ID 45A VDSS 100V Rdson-typ - 17m (@Vgs=10V Qg-typ 21nC APPLICATIONS High power DC/DC DC/DC Converters and switch mode power supplies Synchronous Rectification DC/DCin DC
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .