MP15N60EIS MOSFET. Datasheet pdf. Equivalent
Type Designator: MP15N60EIS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 53.73 nC
Rise Time (tr): 64 nS
Drain-Source Capacitance (Cd): 195 pF
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: TO263
MP15N60EIS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP15N60EIS Datasheet (PDF)
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N RN-CHANNEL MOSFET MP15N60EI Package MAIN CHARACTERISTICS ID 15A VDSS 600V Rdson-max 0.48 Vgs=10V Qg-Typ 53.73nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
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