MS65R120C Datasheet. Specs and Replacement
Type Designator: MS65R120C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 290.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220
MS65R120C substitution
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MS65R120C datasheet
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf
N R N-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒
Detailed specifications: MP4N50FR, MP4N60ER, MP7AN65EC, MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C, MP9N150, 4N60, MS65R120F, MS65R120GE, MS65R120S, MS65R135R, MS65R170B, MS65R170C, MS65R170F, MS65R170GE
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
