MS65R120S Datasheet. Specs and Replacement

Type Designator: MS65R120S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO263

MS65R120S substitution

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MS65R120S datasheet

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MS65R120S

N R N-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

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Detailed specifications: MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C, MP9N150, MS65R120C, MS65R120F, MS65R120GE, 2SK3568, MS65R135R, MS65R170B, MS65R170C, MS65R170F, MS65R170GE, MS65R170S, MS65R190RF1, MS65R190RGE

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