MS65R120S MOSFET. Datasheet pdf. Equivalent
Type Designator: MS65R120S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 290.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58.4 nC
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 96 pF
Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm
Package: TO263
MS65R120S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MS65R120S Datasheet (PDF)
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf
N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf
N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r190rf1 ms65r190rge.pdf
N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r135r.pdf
N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
