MS65R170B Datasheet and Replacement
Type Designator: MS65R170B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 238 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO262
MS65R170B substitution
MS65R170B Datasheet (PDF)
ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf

N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf

N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r190rf1 ms65r190rge.pdf

N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r135r.pdf

N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
Datasheet: MP7AN65EV , MP88N25C , MP9N150 , MS65R120C , MS65R120F , MS65R120GE , MS65R120S , MS65R135R , 13N50 , MS65R170C , MS65R170F , MS65R170GE , MS65R170S , MS65R190RF1 , MS65R190RGE , MS65R360C , MS65R360F .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - MS65R170B MOSFET datasheet
MS65R170B cross reference
MS65R170B equivalent finder
MS65R170B lookup
MS65R170B substitution
MS65R170B replacement
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK



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