MS65R190RF1 Datasheet and Replacement
Type Designator: MS65R190RF1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220F
MS65R190RF1 substitution
MS65R190RF1 Datasheet (PDF)
ms65r190rf1 ms65r190rge.pdf
N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf
N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf
N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r135r.pdf
N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
Datasheet: MS65R120GE , MS65R120S , MS65R135R , MS65R170B , MS65R170C , MS65R170F , MS65R170GE , MS65R170S , 20N50 , MS65R190RGE , MS65R360C , MS65R360F , MS65R360R , MS65R400RF , MS65R400RR , MS65R600F , MS65R600R .
Keywords - MS65R190RF1 MOSFET datasheet
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