All MOSFET. MS65R190RF1 Datasheet

 

MS65R190RF1 Datasheet and Replacement


   Type Designator: MS65R190RF1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44.4 nC
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220F
 

 MS65R190RF1 substitution

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MS65R190RF1 Datasheet (PDF)

 ..1. Size:973K  jilin sino
 ms65r190rf1 ms65r190rge.pdf pdf_icon

MS65R190RF1

N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 8.1. Size:994K  jilin sino
 ms65r120f ms65r120ge ms65r120c ms65r120s.pdf pdf_icon

MS65R190RF1

N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 8.2. Size:1099K  jilin sino
 ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf pdf_icon

MS65R190RF1

N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 8.3. Size:837K  jilin sino
 ms65r135r.pdf pdf_icon

MS65R190RF1

N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

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History: FCPF220N80

Keywords - MS65R190RF1 MOSFET datasheet

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