MS65R360R Specs and Replacement

Type Designator: MS65R360R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 129 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: DPAK

MS65R360R substitution

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MS65R360R datasheet

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MS65R360R

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MS65R360R

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MS65R360R

N R N-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

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MS65R360R

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Detailed specifications: MS65R170C, MS65R170F, MS65R170GE, MS65R170S, MS65R190RF1, MS65R190RGE, MS65R360C, MS65R360F, IRFZ24N, MS65R400RF, MS65R400RR, MS65R600F, MS65R600R, MS65R620RF, MS65R620RR, MT03N03FAL, MT04N004B

Keywords - MS65R360R MOSFET specs

 MS65R360R cross reference

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs