All MOSFET. MS65R620RF Datasheet

 

MS65R620RF MOSFET. Datasheet pdf. Equivalent


   Type Designator: MS65R620RF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.6 nC
   trⓘ - Rise Time: 33.8 nS
   Cossⓘ - Output Capacitance: 27.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO220F

 MS65R620RF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MS65R620RF Datasheet (PDF)

 ..1. Size:887K  jilin sino
 ms65r620rf ms65r620rr.pdf

MS65R620RF MS65R620RF

N RN-CHANNEL MOSFET MS65R620R Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 620m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 8.1. Size:863K  jilin sino
 ms65r600f ms65r600r.pdf

MS65R620RF MS65R620RF

N R N-CHANNEL MOSFET MS65R600 Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 600m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.1. Size:994K  jilin sino
 ms65r120f ms65r120ge ms65r120c ms65r120s.pdf

MS65R620RF MS65R620RF

N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.2. Size:1099K  jilin sino
 ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf

MS65R620RF MS65R620RF

N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.3. Size:973K  jilin sino
 ms65r190rf1 ms65r190rge.pdf

MS65R620RF MS65R620RF

N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.4. Size:913K  jilin sino
 ms65r400rf ms65r400rr.pdf

MS65R620RF MS65R620RF

N N-CHANNEL MOSFET RMS65R400R Package MAIN CHARACTERISTICS ID 11A VDSS 650 V Rdson-max 0.45 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.5. Size:837K  jilin sino
 ms65r135r.pdf

MS65R620RF MS65R620RF

N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.6. Size:1088K  jilin sino
 ms65r360f ms65r360r ms65r360c.pdf

MS65R620RF MS65R620RF

N RN-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS Package ID 11A VDSS 650 V Rdson-max 0.40 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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