MT40N20A MOSFET. Datasheet pdf. Equivalent
Type Designator: MT40N20A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 104 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO220
MT40N20A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MT40N20A Datasheet (PDF)
..1. Size:895K jilin sino
mt40n20a.pdf
mt40n20a.pdf
N N-CHANNEL MOSFET MT40N20A MAIN CHARACTERISTICS Package ID 40A VDSS 200V Rdson-max - 85m (@Vgs=10V Qg-typ 52nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification
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