All MOSFET. MT40N20A Datasheet

 

MT40N20A Datasheet and Replacement


   Type Designator: MT40N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 52 nC
   tr ⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO220
 

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MT40N20A Datasheet (PDF)

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MT40N20A

N N-CHANNEL MOSFET MT40N20A MAIN CHARACTERISTICS Package ID 40A VDSS 200V Rdson-max - 85m (@Vgs=10V Qg-typ 52nC APPLICATIONS Isolated DC/DC Converters in Telecom and DC/DC Industrial Synchronous Rectification

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