FDZ375P MOSFET. Datasheet pdf. Equivalent
Type Designator: FDZ375P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: WLCSP
FDZ375P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDZ375P Datasheet (PDF)
fdz375p.pdf
April 2010FDZ375PP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mFeatures General Description Max rDS(on) = 78 m at VGS = -4.5 V, ID = -2.0 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 92 m at VGS = -2.5 V, ID = -1.5 Athe FDZ375P minimizes bot
fdz371pz.pdf
July 2014FDZ371PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mFeatures General Description Max rDS(on) = 75 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 90 m at VGS = -2.5 V, ID = -1.5 Athe FDZ371PZ minimizes bot
fdz372nz.pdf
March 2010FDZ372NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mFeatures General DescriptionDesigned on Fairchild's advanced 1.5 V PowerTrench process Max rDS(on) = 50 m at VGS = 4.5 V, ID = 2 Awith state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 60 m at VGS = 2.5 V, ID = 2 Athe FDZ372NZ minimizes both PCB sp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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