FDZ375P Specs and Replacement
Type Designator: FDZ375P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: WLCSP
FDZ375P substitution
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FDZ375P datasheet
fdz375p.pdf
April 2010 FDZ375P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 78 m Features General Description Max rDS(on) = 78 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 92 m at VGS = -2.5 V, ID = -1.5 A the FDZ375P minimizes bot... See More ⇒
fdz371pz.pdf
July 2014 FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 m Features General Description Max rDS(on) = 75 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 90 m at VGS = -2.5 V, ID = -1.5 A the FDZ371PZ minimizes bot... See More ⇒
fdz372nz.pdf
March 2010 FDZ372NZ N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 4.7 A, 50 m Features General Description Designed on Fairchild's advanced 1.5 V PowerTrench process Max rDS(on) = 50 m at VGS = 4.5 V, ID = 2 A with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 60 m at VGS = 2.5 V, ID = 2 A the FDZ372NZ minimizes both PCB sp... See More ⇒
Detailed specifications: SDT02N02, FDZ1905PZ, FDZ191P, FDZ192NZ, FDZ193P, FDZ197PZ, FDZ371PZ, FDZ372NZ, SPP20N60C3, FDZ391P, FQA10N80CF109, SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, FQA13N80F109, SDF07N80
Keywords - FDZ375P MOSFET specs
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