NCE0104AN Specs and Replacement
Type Designator: NCE0104AN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ -
Output Capacitance: 54.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT23-6L
- MOSFET ⓘ Cross-Reference Search
NCE0104AN datasheet
..1. Size:298K ncepower
nce0104an.pdf 
http //www.ncepower.com NCE0104AN NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=100V,ID=4A Schematic diagram RDS(ON) ... See More ⇒
7.1. Size:657K ncepower
nce0104s.pdf
http //www.ncepower.com NCE0104S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =4A DS D R ... See More ⇒
8.1. Size:621K ncepower
nce0102e.pdf
NCE0102E http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102E uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 2A DS D R ... See More ⇒
8.2. Size:287K ncepower
nce0102m.pdf
Pb Free Product http //www.ncepower.com NCE0102M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒
8.3. Size:303K ncepower
nce0102z.pdf
Pb Free Product http //www.ncepower.com NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒
8.5. Size:333K ncepower
nce0106ar.pdf
http //www.ncepower.com NCE0106AR NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A RDS(ON) ... See More ⇒
8.6. Size:433K ncepower
nce0108as.pdf
Pb Free Product NCE0108AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON) ... See More ⇒
8.7. Size:668K ncepower
nce0105m.pdf
http //www.ncepower.com NCE0105M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0105M uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 5A DS D R ... See More ⇒
8.8. Size:337K ncepower
nce0103.pdf
Pb Free Product http //www.ncepower.com NCE0103 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒
8.9. Size:328K ncepower
nce0103y.pdf
Pb Free Product http //www.ncepower.com NCE0103Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒
8.10. Size:312K ncepower
nce0102a.pdf
http //www.ncepower.com NCE0102A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0102A uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 2A RDS(ON) ... See More ⇒
8.11. Size:294K ncepower
nce0102.pdf
Pb Free Product http //www.ncepower.com NCE0102 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒
8.12. Size:398K ncepower
nce0107ak.pdf
Pb Free Product http //www.ncepower.com NCE0107AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒
8.13. Size:346K ncepower
nce0102b.pdf
http //www.ncepower.com NCE0102B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S VDS = 100V,ID = 1.8A RDS(ON) ... See More ⇒
8.14. Size:359K ncepower
nce0106r.pdf
Pb Free Product http //www.ncepower.com NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON) ... See More ⇒
8.15. Size:363K ncepower
nce0106z.pdf
Pb Free Product http //www.ncepower.com NCE0106Z NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0106Z uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 6A RDS(ON) ... See More ⇒
8.16. Size:318K cn vbsemi
nce0108as.pdf
NCE0108AS www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS S... See More ⇒
Detailed specifications: A2N7002K, BSS123K, NCE0102A, NCE0102B, NCE0102E, NCE0102M, NCE0102Z, NCE0103, IRFZ44N, NCE0104S, NCE0105M, NCE0106AR, NCE0107AK, NCE0115AK, NCE0117AK, NCE011N30GU, NCE0130GA
Keywords - NCE0104AN MOSFET specs
NCE0104AN cross reference
NCE0104AN equivalent finder
NCE0104AN pdf lookup
NCE0104AN substitution
NCE0104AN replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
