NCE0107AK PDF and Equivalents Search

 ..1. Size:398K  ncepower
 nce0107ak.pdf

Pb Free Product http //www.ncepower.com NCE0107AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒

 8.1. Size:621K  ncepower
 nce0102e.pdf

NCE0102E http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102E uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 2A DS D R ... See More ⇒

 8.2. Size:287K  ncepower
 nce0102m.pdf

Pb Free Product http //www.ncepower.com NCE0102M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒

 8.3. Size:303K  ncepower
 nce0102z.pdf

Pb Free Product http //www.ncepower.com NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒

 8.4. Size:330K  ncepower
 nce0103m.pdf

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 8.5. Size:333K  ncepower
 nce0106ar.pdf

http //www.ncepower.com NCE0106AR NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A RDS(ON) ... See More ⇒

 8.6. Size:657K  ncepower
 nce0104s.pdf

http //www.ncepower.com NCE0104S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =4A DS D R ... See More ⇒

 8.7. Size:433K  ncepower
 nce0108as.pdf

Pb Free Product NCE0108AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON) ... See More ⇒

 8.8. Size:668K  ncepower
 nce0105m.pdf

http //www.ncepower.com NCE0105M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0105M uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 5A DS D R ... See More ⇒

 8.9. Size:337K  ncepower
 nce0103.pdf

Pb Free Product http //www.ncepower.com NCE0103 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒

 8.10. Size:328K  ncepower
 nce0103y.pdf

Pb Free Product http //www.ncepower.com NCE0103Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒

 8.11. Size:312K  ncepower
 nce0102a.pdf

http //www.ncepower.com NCE0102A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0102A uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 2A RDS(ON) ... See More ⇒

 8.12. Size:294K  ncepower
 nce0102.pdf

Pb Free Product http //www.ncepower.com NCE0102 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒

 8.13. Size:298K  ncepower
 nce0104an.pdf

http //www.ncepower.com NCE0104AN NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=100V,ID=4A Schematic diagram RDS(ON) ... See More ⇒

 8.14. Size:346K  ncepower
 nce0102b.pdf

http //www.ncepower.com NCE0102B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S VDS = 100V,ID = 1.8A RDS(ON) ... See More ⇒

 8.15. Size:359K  ncepower
 nce0106r.pdf

Pb Free Product http //www.ncepower.com NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON) ... See More ⇒

 8.16. Size:363K  ncepower
 nce0106z.pdf

Pb Free Product http //www.ncepower.com NCE0106Z NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0106Z uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 6A RDS(ON) ... See More ⇒

 8.17. Size:318K  cn vbsemi
 nce0108as.pdf

NCE0108AS www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS S... See More ⇒