NCE0115AK Specs and Replacement
Type Designator: NCE0115AK
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ -
Output Capacitance: 44.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
NCE0115AK datasheet
..1. Size:422K ncepower
nce0115ak.pdf 
http //www.ncepower.com NCE0115AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON) ... See More ⇒
8.1. Size:441K 1
nce0117k.pdf
NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
8.2. Size:373K ncepower
nce0117.pdf
Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
8.3. Size:448K ncepower
nce0110ak.pdf
Pb Free Product http //www.ncepower.com NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON) ... See More ⇒
8.4. Size:402K ncepower
nce0110k.pdf
Pb Free Product http //www.ncepower.com NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON) ... See More ⇒
8.5. Size:653K ncepower
nce0117ak.pdf
NCE0117AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =17A DS D R ... See More ⇒
8.6. Size:922K ncepower
nce011n30gu.pdf
NCE011N30GU http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE011N30GU uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =325A DS(ON) DS D be used in a wide variety of applications. R =0.75m (typical) @ V =10V DS(ON) GS R =1.5m (typical) @ V =4.5V Application DS(ON) GS ... See More ⇒
8.7. Size:436K ncepower
nce0117k.pdf
Pb Free Product http //www.ncepower.com NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
8.8. Size:425K ncepower
nce0110as.pdf
Pb Free Product NCE0110AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON) ... See More ⇒
8.9. Size:355K ncepower
nce0117i.pdf
NCE0117I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON) ... See More ⇒
8.10. Size:833K cn vbsemi
nce0117.pdf
NCE0117 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI... See More ⇒
Detailed specifications: NCE0102M, NCE0102Z, NCE0103, NCE0104AN, NCE0104S, NCE0105M, NCE0106AR, NCE0107AK, IRF540N, NCE0117AK, NCE011N30GU, NCE0130GA, NCE0140AK2, NCE0140I2, NCE0140IA, NCE0157A, NCE0157A2D
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