FDZ391P Specs and Replacement

Type Designator: FDZ391P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: WLCSP

FDZ391P substitution

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FDZ391P datasheet

 ..1. Size:270K  fairchild semi
 fdz391p.pdf pdf_icon

FDZ391P

November 2008 FDZ391P tm P-Channel 1.5 V PowerTrench Thin WL-CSP MOSFET -20 V, -3 A, 85 m Features General Description Designed on Fairchild's advanced 1.5 V PowerTrench process Max rDS(on) = 85 m at VGS = -4.5 V, ID = -1 A with state of the art "low pitch" Thin WLCSP packaging process, Max rDS(on) = 123 m at VGS = -2.5 V, ID = -1 A the FDZ391P minimizes both PCB space... See More ⇒

Detailed specifications: FDZ1905PZ, FDZ191P, FDZ192NZ, FDZ193P, FDZ197PZ, FDZ371PZ, FDZ372NZ, FDZ375P, SKD502T, FQA10N80CF109, SDF08N50, FQA11N90F109, FQA11N90CF109, FQA13N50CF, FQA13N80F109, SDF07N80, FQA140N10

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