NCE01P30K Specs and Replacement
Type Designator: NCE01P30K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 91 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 200.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO252
NCE01P30K substitution
- MOSFET ⓘ Cross-Reference Search
NCE01P30K datasheet
nce01p30k.pdf
http //www.ncepower.com NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-30A Schematic diagram DS D R ... See More ⇒
nce01p30i.pdf
http //www.ncepower.com NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON) ... See More ⇒
nce01p30l.pdf
http //www.ncepower.com NCE01P30L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: NCE01NP03S, NCE01P05S, NCE01P13, NCE01P13I, NCE01P18, NCE01P18L, NCE01P30D, NCE01P30I, IRF9540, NCE01P30L, NCE01P35K, NCE0203S, NCE0205IA, NCE0208IA, NCE0224A, NCE0224AF, NCE0224AK
Keywords - NCE01P30K MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
