NCE02P20K Specs and Replacement

Type Designator: NCE02P20K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO252

NCE02P20K substitution

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NCE02P20K datasheet

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NCE02P20K

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 9.1. Size:326K  ncepower
nce0224f.pdf pdf_icon

NCE02P20K

http //www.ncepower.com NCE0224F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON) ... See More ⇒

 9.2. Size:352K  ncepower
nce0240f.pdf pdf_icon

NCE02P20K

Pb Free Product http //www.ncepower.com NCE0240F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON) ... See More ⇒

 9.3. Size:305K  ncepower
nce0205ia.pdf pdf_icon

NCE02P20K

http //www.ncepower.com NCE0205IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON) ... See More ⇒

Detailed specifications: NCE0224DA, NCE0224F, NCE0250D, NCE0260P, NCE0260T, NCE0270T, NCE0275, NCE0275D, 12N60, NCE035P40GU, NCE1012E, NCE1013E, NCE1102N, NCE1205, NCE1490, NCE14P40K, NCE1504R

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