NCE1012E Datasheet. Specs and Replacement
Type Designator: NCE1012E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT-523
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NCE1012E datasheet
..1. Size:694K ncepower
nce1012e.pdf 
http //www.ncepower.com NCE1012E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1012E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V,I =0.6A DS D Schematic diagram R ... See More ⇒
9.1. Size:1119K ncepower
nce100ed65vt4.pdf
NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒
9.3. Size:780K ncepower
nce100ed65bt.pdf
NCE100ED65BT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = ... See More ⇒
9.4. Size:1092K ncepower
nce100ed65vtp4.pdf
NCE100ED65VTP4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC ... See More ⇒
9.5. Size:1617K ncepower
nce100td120vtp.pdf
Pb Free Product NCE100TD120VTP 1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switchin... See More ⇒
9.6. Size:606K ncepower
nce10td60bk.pdf
PbFreeProduct NCE10TD60BK 600V, 10A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s... See More ⇒
9.7. Size:1166K ncepower
nce100ed65vt.pdf
NCE100ED65VT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = ... See More ⇒
9.8. Size:738K ncepower
nce100ed65bt4.pdf
NCE100ED65BT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC =... See More ⇒
9.9. Size:742K ncepower
nce100ed75vtp4.pdf
NCE100ED75VTP4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC ... See More ⇒
9.10. Size:764K ncepower
nce100ed75vt4.pdf
NCE100ED75VT4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =... See More ⇒
9.11. Size:1125K ncepower
nce10td60bd.pdf
Pb Free Product NCE10TD60BD 600V, 10A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒
9.14. Size:811K ncepower
nce100ed75vt.pdf
NCE100ED75VT 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = ... See More ⇒
9.15. Size:1856K ncepower
nce100td120vtp4.pdf
Pb Free Product NCE100TD120VTP4 1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switchi... See More ⇒
9.16. Size:1179K ncepower
nce100ed65vtp.pdf
NCE100ED65VTP 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒
9.17. Size:1550K ncepower
nce100td120btp.pdf
Pb Free Product NCE100TD120BTP 1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switchin... See More ⇒
Detailed specifications: NCE0250D, NCE0260P, NCE0260T, NCE0270T, NCE0275, NCE0275D, NCE02P20K, NCE035P40GU, IRFB3607, NCE1013E, NCE1102N, NCE1205, NCE1490, NCE14P40K, NCE1504R, NCE1505S, NCE1507AK
Keywords - NCE1012E MOSFET specs
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