All MOSFET. FQA11N90CF109 Datasheet

 

FQA11N90CF109 Datasheet and Replacement


   Type Designator: FQA11N90CF109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO3PN
 

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FQA11N90CF109 Datasheet (PDF)

 5.1. Size:706K  fairchild semi
 fqa11n90c.pdf pdf_icon

FQA11N90CF109

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

 5.2. Size:823K  fairchild semi
 fqa11n90c f109.pdf pdf_icon

FQA11N90CF109

September 2007 QFETFQA11N90C_F109900V N-Channel MOSFETFeatures Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 23pF)This advanced technology has been especially tailored

 5.3. Size:708K  onsemi
 fqa11n90c.pdf pdf_icon

FQA11N90CF109

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

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