FQA11N90CF109 MOSFET Datasheet: N-Ch, 900V, 11A. Full specification with pinout and replacement list

FQA11N90CF109 Specs and Replacement

Type Designator: FQA11N90CF109

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO3PN

FQA11N90CF109 substitution

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FQA11N90CF109 datasheet

5.1. Size:706K fairchild semi
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FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switching... See More ⇒

5.2. Size:823K fairchild semi
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September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored... See More ⇒

5.3. Size:708K onsemi
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