NCE1205 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE1205
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.6 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: DFN2X2-6L
NCE1205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE1205 Datasheet (PDF)
nce1205.pdf
Pb Free Producthttp://www.ncepower.com NCE1205N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =1
nce120ed120vtp4.pdf
NCE120ED120VTP41200V, 120A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offerssuperior conduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.60
nce120ed120vtp.pdf
NCE120ED120VTP1200V, 120A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offerssuperior conduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.60V
nce1230sp.pdf
http://www.ncepower.comNCE1230SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescriptionGeneral FeaturesThe NCE1230SP uses advanced trench technology to provide V =12V,I =30ASSS Sexcellent R , low gate charge and operation with gateSS(ON)R on =1.0m (typical) @ V =4.5VSS( ) GSvoltages as low as 2.5V while retaining a 8V V rating. It isGS(
nce12p09s.pdf
http://www.ncepower.com NCE12P09SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features VDS = -12V,ID = -9A Schematic diagram
nce1227sp.pdf
http://www.ncepower.com NCE1227SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1227SP uses advanced trench technology to provide VSSS =12V,IS =27A excellent RSS(ON), low gate charge and operation with gate RSS(on)=2.1m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 8V VGS(MAX) rating. It is
nce1216.pdf
Pb Free Producthttp://www.ncepower.com NCE1216NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram
nce1220sp.pdf
http://www.ncepower.com NCE1220SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1220SP uses advanced trench technology to provide VSSS =12V,IS =20A excellent RSS(ON), low gate charge and operation with gate RSS(on)=3.6m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 10V VGS(MAX) rating. It is
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
