NCE1490 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE1490
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 140 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 160 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 463 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO220
NCE1490 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE1490 Datasheet (PDF)
nce1490.pdf
Pb Free Producthttp://www.ncepower.com NCE1490NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =90A RDS(ON)
nce14p40k.pdf
http://www.ncepower.comNCE14P40KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE14P40K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V = -40V,I = -30A Schematic diagramDS DR =11m @ V = -10V (Typ)DS(ON) GSR =15m @ V = -4.5V (Ty
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