NCE1504R MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE1504R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT223
NCE1504R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE1504R Datasheet (PDF)
nce1504r.pdf
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http://www.ncepower.com NCE1504RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)
nce1503s.pdf
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http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)
nce1505s.pdf
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Pb Free Producthttp://www.ncepower.com NCE1505SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)
nce1507ak.pdf
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http://www.ncepower.com NCE1507AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)
nce1502r.pdf
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Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![NCE1504R](https://alltransistors.com/images/us.png)
![NCE1504R](https://alltransistors.com/images/es.png)
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