FQA13N50CF PDF and Equivalents Search

 

FQA13N50CF Specs and Replacement

Type Designator: FQA13N50CF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 218 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO3PN

FQA13N50CF substitution

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FQA13N50CF datasheet

 ..1. Size:776K  fairchild semi
fqa13n50cf.pdf pdf_icon

FQA13N50CF

July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to ... See More ⇒

 ..2. Size:2066K  onsemi
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FQA13N50CF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:699K  fairchild semi
fqa13n50c.pdf pdf_icon

FQA13N50CF

QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.5A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fa... See More ⇒

 5.2. Size:862K  fairchild semi
fqa13n50c f109.pdf pdf_icon

FQA13N50CF

December 2013 FQA13N50C_F109 N-Channel QFET MOSFET 500 V, 13.5 A, 480 m Description Features These N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC) has been especia... See More ⇒

Detailed specifications: FDZ371PZ, FDZ372NZ, FDZ375P, FDZ391P, FQA10N80CF109, SDF08N50, FQA11N90F109, FQA11N90CF109, 5N65, FQA13N80F109, SDF07N80, FQA140N10, SDF07N65, FQA160N08, FQA170N06, FQA19N60, SDF07N50T

Keywords - FQA13N50CF MOSFET specs

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