NCE2301A Specs and Replacement

Type Designator: NCE2301A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT-23

NCE2301A substitution

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NCE2301A datasheet

 ..1. Size:262K  ncepower
 nce2301a.pdf pdf_icon

NCE2301A

Pb Free Product http //www.ncepower.com NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram ... See More ⇒

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 nce2301c.pdf pdf_icon

NCE2301A

Pb Free Product http //www.ncepower.com NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -15V,... See More ⇒

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 nce2301e.pdf pdf_icon

NCE2301A

Pb Free Product http //www.ncepower.com NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

 7.3. Size:241K  ncepower
 nce2301.pdf pdf_icon

NCE2301A

Pb Free Product http //www.ncepower.com NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A ... See More ⇒

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Detailed specifications: NCE20NP1006S, NCE20P05J, NCE20P05Y, NCE20P07N, NCE20P08J, NCE20P09S, NCE20P10J, NCE20P85GU, 60N06, NCE2301B, NCE2301C, NCE2301D, NCE2301E, NCE2301F, NCE2302B, NCE2302C, NCE2308X

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.