NCE2301B
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE2301B
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.2
nC
trⓘ - Rise Time: 5.5
nS
Cossⓘ -
Output Capacitance: 63
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
SOT-23
NCE2301B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE2301B
Datasheet (PDF)
..1. Size:250K ncepower
nce2301b.pdf 
Pb Free Producthttp://www.ncepower.com NCE2301BNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,
7.1. Size:262K ncepower
nce2301a.pdf
Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram
7.2. Size:257K ncepower
nce2301c.pdf
Pb Free Producthttp://www.ncepower.com NCE2301CNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -15V,
7.3. Size:330K ncepower
nce2301e.pdf
Pb Free Producthttp://www.ncepower.com NCE2301ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
7.4. Size:241K ncepower
nce2301.pdf
Pb Free Producthttp://www.ncepower.com NCE2301NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A
7.5. Size:261K ncepower
nce2301f.pdf
Pb Free Producthttp://www.ncepower.com NCE2301FNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,
7.6. Size:249K ncepower
nce2301d.pdf
Pb Free Producthttp://www.ncepower.com NCE2301DNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,
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