NCE2301B Specs and Replacement

Type Designator: NCE2301B

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT-23

NCE2301B substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE2301B datasheet

 ..1. Size:250K  ncepower
 nce2301b.pdf pdf_icon

NCE2301B

Pb Free Product http //www.ncepower.com NCE2301B NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,... See More ⇒

 7.1. Size:262K  ncepower
 nce2301a.pdf pdf_icon

NCE2301B

Pb Free Product http //www.ncepower.com NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram ... See More ⇒

 7.2. Size:257K  ncepower
 nce2301c.pdf pdf_icon

NCE2301B

Pb Free Product http //www.ncepower.com NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -15V,... See More ⇒

 7.3. Size:330K  ncepower
 nce2301e.pdf pdf_icon

NCE2301B

Pb Free Product http //www.ncepower.com NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

SHOW MORE

Detailed specifications: NCE20P05J, NCE20P05Y, NCE20P07N, NCE20P08J, NCE20P09S, NCE20P10J, NCE20P85GU, NCE2301A, IRFP064N, NCE2301C, NCE2301D, NCE2301E, NCE2301F, NCE2302B, NCE2302C, NCE2308X, NCE2312X

Keywords - NCE2301B MOSFET specs

 NCE2301B cross reference

 NCE2301B equivalent finder

 NCE2301B pdf lookup

 NCE2301B substitution

 NCE2301B replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs