All MOSFET. NCE2301B Datasheet

 

NCE2301B Datasheet and Replacement


   Type Designator: NCE2301B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-23
 

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NCE2301B Datasheet (PDF)

 ..1. Size:250K  ncepower
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NCE2301B

Pb Free Producthttp://www.ncepower.com NCE2301BNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 7.1. Size:262K  ncepower
 nce2301a.pdf pdf_icon

NCE2301B

Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

 7.2. Size:257K  ncepower
 nce2301c.pdf pdf_icon

NCE2301B

Pb Free Producthttp://www.ncepower.com NCE2301CNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -15V,

 7.3. Size:330K  ncepower
 nce2301e.pdf pdf_icon

NCE2301B

Pb Free Producthttp://www.ncepower.com NCE2301ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

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Datasheet: NCE20P05J , NCE20P05Y , NCE20P07N , NCE20P08J , NCE20P09S , NCE20P10J , NCE20P85GU , NCE2301A , IRFP064N , NCE2301C , NCE2301D , NCE2301E , NCE2301F , NCE2302B , NCE2302C , NCE2308X , NCE2312X .

History: SWF7N80D | SWU7N80D

Keywords - NCE2301B MOSFET datasheet

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