NCE3009S MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE3009S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.5 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
NCE3009S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE3009S Datasheet (PDF)
nce3009s.pdf
NCE3009Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =9A Schematic diagram RDS(ON)
nce3008m.pdf
Pb Free Producthttp://www.ncepower.com NCE3008MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic diagram General Feature
nce3007s.pdf
Pb Free Producthttp://www.ncepower.com NCE3007SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features VDS =-30V,ID =-6.5A RDS(ON)
nce3008n.pdf
http://www.ncepower.com NCE3008NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)
nce3008y.pdf
http://www.ncepower.com NCE3008YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)
nce3008xm.pdf
http://www.ncepower.comNCE3008XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3008XM uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aGBattery protection or in other Switching application.SGeneral Features V = 30V,I = 8A Schematic diagram
nce3007s.pdf
NCE3007Swww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
