All MOSFET. NCE3030K Datasheet

 

NCE3030K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE3030K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252

 NCE3030K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE3030K Datasheet (PDF)

 ..1. Size:397K  ncepower
 nce3030k.pdf

NCE3030K NCE3030K

Pb Free Producthttp://www.ncepower.com NCE3030KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 7.1. Size:741K  ncepower
 nce3030q.pdf

NCE3030K NCE3030K

http://www.ncepower.comNCE3030QNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =30ADescription DS DThe NCE3030Q uses advanced trench technology and R

 8.1. Size:331K  ncepower
 nce3035g.pdf

NCE3030K NCE3030K

Pb Free Producthttp://www.ncepower.com NCE3035GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 8.2. Size:327K  ncepower
 nce3035q.pdf

NCE3030K NCE3030K

Pb Free Producthttp://www.ncepower.com NCE3035QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 8.3. Size:1124K  cn vbsemi
 nce3035g.pdf

NCE3030K NCE3030K

NCE3035Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 SN

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