NCE3030Q Datasheet and Replacement
Type Designator: NCE3030Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 157 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN3.3X3.3-8L
NCE3030Q substitution
NCE3030Q Datasheet (PDF)
nce3030q.pdf

http://www.ncepower.comNCE3030QNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =30ADescription DS DThe NCE3030Q uses advanced trench technology and R
nce3030k.pdf

Pb Free Producthttp://www.ncepower.com NCE3030KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
nce3035g.pdf

Pb Free Producthttp://www.ncepower.com NCE3035GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)
nce3035q.pdf

Pb Free Producthttp://www.ncepower.com NCE3035QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)
Datasheet: NCE3008N , NCE3008XM , NCE3008Y , NCE3009S , NCE3013J , NCE3015S , NCE3025G , NCE3030K , IRF3710 , NCE3040Q , NCE3045G , NCE3050I , NCE3050KA , NCE3055 , NCE3065G , NCE3065Q , NCE3080I .
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