NCE3080I Specs and Replacement

Type Designator: NCE3080I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-251

NCE3080I substitution

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NCE3080I datasheet

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NCE3080I

Pb Free Product http //www.ncepower.com NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

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NCE3080I

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NCE3080I

Pb Free Product http //www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

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NCE3080I

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Detailed specifications: NCE3030Q, NCE3040Q, NCE3045G, NCE3050I, NCE3050KA, NCE3055, NCE3065G, NCE3065Q, 7N65, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG, NCE30H11G, NCE30H12AK, NCE30H15B

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs