NCE30H15B Specs and Replacement

Type Designator: NCE30H15B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-220

NCE30H15B substitution

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NCE30H15B datasheet

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NCE30H15B

Pb Free Product http //www.ncepower.com NCE30H15B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15B uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R ... See More ⇒

 0.1. Size:754K  ncepower
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NCE30H15B

http //www.ncepower.com NCE30H15BG NCE N-Channel Enhancement Mode Power MOSFET General Features V =30V,I =150A DS D Description R ... See More ⇒

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NCE30H15B

Pb Free Product http //www.ncepower.com NCE30H15BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R ... See More ⇒

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NCE30H15B

Pb Free Product http //www.ncepower.com NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON) ... See More ⇒

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Detailed specifications: NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG, NCE30H11G, NCE30H12AK, IRF9540N, NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q, NCE30NP4030G, NCE30P06J

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs