All MOSFET. NCE30H15BG Datasheet

 

NCE30H15BG Datasheet and Replacement


   Type Designator: NCE30H15BG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: PDFN5X6-8L
 

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NCE30H15BG Datasheet (PDF)

 ..1. Size:754K  ncepower
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NCE30H15BG

http://www.ncepower.com NCE30H15BGNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =150ADS DDescriptionR

 5.1. Size:723K  ncepower
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NCE30H15BG

Pb Free Producthttp://www.ncepower.comNCE30H15BNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15B uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

 5.2. Size:693K  ncepower
 nce30h15bk.pdf pdf_icon

NCE30H15BG

Pb Free Producthttp://www.ncepower.comNCE30H15BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

 6.1. Size:441K  ncepower
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NCE30H15BG

Pb Free Producthttp://www.ncepower.com NCE30H15KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

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Datasheet: NCE3080L , NCE3085K , NCE30H10BG , NCE30H10G , NCE30H11BG , NCE30H11G , NCE30H12AK , NCE30H15B , IRF4905 , NCE30H15BK , NCE30H33LL , NCE30ND35Q , NCE30NP1812G , NCE30NP1812Q , NCE30NP4030G , NCE30P06J , NCE30P10S .

History: IRF610L | STD100NH02LT4

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