NCE30NP1812G Specs and Replacement

Type Designator: NCE30NP1812G

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 65.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: DFN5X6-8L

NCE30NP1812G substitution

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NCE30NP1812G datasheet

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NCE30NP1812G

http //www.ncepower.com NCE30NP1812G NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent R and low gate charge.This device is DS(ON) suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram V = 30V,I = 18A V = -30V,I =- 12A DS D DS D R ... See More ⇒

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NCE30NP1812G

NCE30NP1812K http //www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A... See More ⇒

 3.2. Size:437K  ncepower
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NCE30NP1812G

http //www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A ... See More ⇒

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 nce30np07s.pdf pdf_icon

NCE30NP1812G

http //www.ncepower.com NCE30NP07S N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5... See More ⇒

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Detailed specifications: NCE30H11BG, NCE30H11G, NCE30H12AK, NCE30H15B, NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q, IRFP260, NCE30NP1812Q, NCE30NP4030G, NCE30P06J, NCE30P10S, NCE30P12BS, NCE30P15AS, NCE30P16Q, NCE30P25BQ

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