NCE30P06J Specs and Replacement

Type Designator: NCE30P06J

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: DFN2X2-6L

NCE30P06J substitution

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NCE30P06J datasheet

 ..1. Size:264K  ncepower
nce30p06j.pdf pdf_icon

NCE30P06J

Pb Free Product http //www.ncepower.com NCE30P06J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diag... See More ⇒

 8.1. Size:334K  ncepower
nce30p25s.pdf pdf_icon

NCE30P06J

Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON) ... See More ⇒

 8.2. Size:577K  ncepower
nce30p55k.pdf pdf_icon

NCE30P06J

NCE30P55K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-30V,I =-55A DS D Schematic diagram R ... See More ⇒

 8.3. Size:729K  ncepower
nce30p40k.pdf pdf_icon

NCE30P06J

http //www.ncepower.com NCE30P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -40A Schematic diagram DS D R =7.8m @ V = -10V (Typ) DS(ON) GS R =11.5m @ V = -4.5V ... See More ⇒

Detailed specifications: NCE30H15B, NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q, NCE30NP4030G, SKD502T, NCE30P10S, NCE30P12BS, NCE30P15AS, NCE30P16Q, NCE30P25BQ, NCE30P25Q, NCE30P30L, NCE30P40K

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs