All MOSFET. NCE30P10S Datasheet

 

NCE30P10S Datasheet and Replacement


   Type Designator: NCE30P10S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: SOP8
 

 NCE30P10S substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE30P10S Datasheet (PDF)

 ..1. Size:277K  ncepower
 nce30p10s.pdf pdf_icon

NCE30P10S

http://www.ncepower.com NCE30P10SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)

 7.1. Size:341K  ncepower
 nce30p15s.pdf pdf_icon

NCE30P10S

Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 7.2. Size:710K  ncepower
 nce30p12bs.pdf pdf_icon

NCE30P10S

http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR

 7.3. Size:364K  ncepower
 nce30p12s.pdf pdf_icon

NCE30P10S

Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

SHOW MORE

Datasheet: NCE30H15BG , NCE30H15BK , NCE30H33LL , NCE30ND35Q , NCE30NP1812G , NCE30NP1812Q , NCE30NP4030G , NCE30P06J , K4145 , NCE30P12BS , NCE30P15AS , NCE30P16Q , NCE30P25BQ , NCE30P25Q , NCE30P30L , NCE30P40K , NCE30P55K .

Keywords - NCE30P10S MOSFET datasheet

 NCE30P10S cross reference
 NCE30P10S equivalent finder
 NCE30P10S lookup
 NCE30P10S substitution
 NCE30P10S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.