NCE30P10S Specs and Replacement

Type Designator: NCE30P10S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 181 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: SOP8

NCE30P10S substitution

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NCE30P10S datasheet

 ..1. Size:277K  ncepower
 nce30p10s.pdf pdf_icon

NCE30P10S

http //www.ncepower.com NCE30P10S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON) ... See More ⇒

 7.1. Size:341K  ncepower
 nce30p15s.pdf pdf_icon

NCE30P10S

Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON) ... See More ⇒

 7.2. Size:710K  ncepower
 nce30p12bs.pdf pdf_icon

NCE30P10S

http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R ... See More ⇒

 7.3. Size:364K  ncepower
 nce30p12s.pdf pdf_icon

NCE30P10S

Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1... See More ⇒

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Detailed specifications: NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q, NCE30NP4030G, NCE30P06J, K4145, NCE30P12BS, NCE30P15AS, NCE30P16Q, NCE30P25BQ, NCE30P25Q, NCE30P30L, NCE30P40K, NCE30P55K

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