All MOSFET. NCE30P12BS Datasheet

 

NCE30P12BS MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE30P12BS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP8

 NCE30P12BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE30P12BS Datasheet (PDF)

 ..1. Size:710K  ncepower
 nce30p12bs.pdf

NCE30P12BS NCE30P12BS

http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR

 6.1. Size:364K  ncepower
 nce30p12s.pdf

NCE30P12BS NCE30P12BS

Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

 7.1. Size:341K  ncepower
 nce30p15s.pdf

NCE30P12BS NCE30P12BS

Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 7.2. Size:277K  ncepower
 nce30p10s.pdf

NCE30P12BS NCE30P12BS

http://www.ncepower.com NCE30P10SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)

 7.3. Size:342K  ncepower
 nce30p15as.pdf

NCE30P12BS NCE30P12BS

Pb Free Producthttp://www.ncepower.com NCE30P15ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)

 7.4. Size:301K  ncepower
 nce30p16q.pdf

NCE30P12BS NCE30P12BS

Pb Free Producthttp://www.ncepower.com NCE30P16QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: STV7NA40 | 2N7002BKV

 

 
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